The Am28F512 is a 512 K bit Flash memory organized as 64 Kbytes of 8 bits each. AMD's Flash memories offer the most cost-effective and reliable read/ write non-volatile random access memory. The Am28F512 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F512 is erased when shipped from the factory.
The standard Am28F512 offers access times as fast as 70 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the Am28F512 has separate chip enable (CE#) and output enable (OE#) controls.
AMD's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The Am28F512 uses a command register to manage this functionality, while maintaining a standard JEDEC Flash Standard 32-pin pinout. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming.
AMD's Flash technology reliably stores memory contents even after 10,000 erase and program cycles. The AMD cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The Am28F512 uses a 12.0V±5% VPP high voltage input to perform the Flasherase and Flashrite algorithms.
The highest degree of latch-up protection is achieved with AMD's proprietary non-epi process. Latch-up protection is provided for stresses up to 100 mA on address and data pins from -1 V to VCC +1 V.
The Am28F512 is byte programmable using 10 ms programming pulses in accordance with AMD's Flashrite programming algorithm. The typical room temperatureprogramming time of the Am28F512 is one second.
The entire
Required Field 
